This Silicon device along with some others replaced Germanium Devices in Preamplifiers and Portable Transistor Radios and Portable Tape Recorders. A Complement is the BC547B NPN General Purpose Transistor. Now for Specs 45V, 100mA, 200 beta approx.
IGBT module from Hitachi. The new IGBT module makes high energy efficiency and silent operation of inverters possible. It has High thermal fatigue durability. It is a High speed and low loss IGBT module.
Leadership in digital technologies, coupled with its in-house analog capabilities. They have solutions for Computing, Communications and Consumer Electronics. They Streamline data transmission and data-communication in the Networks.